package dimensions schematic 8/8/02 page 1 of 5 ?2002 fairchild semiconductor corporation phototransistor optocoupler H24A1 h24a2 description the h24a series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. the devices are housed in a low cost plastic package with lead spacing compatible with a dual in line package. features 4-pin con?uration small package size and low cost ul recognized - ?e e50151 1 2 + e d + 4 3 0.375 (9.52) max 0.020 (0.50) 0.020 (0.50) 0.03 (0.75) 0.023 (0.60) section x-x lead profile 0.315 (8) 0.285 (7.24) x x 0.110 (2.79) 0.090 (2.29) 0.030 (0.76) 0.019 (0.50) 0.35 (8.89) max 0.300 (7.62) min 0.250 (6.35) max 0.030 (0.76) 0.019 (0.50) 1 2 3 4 emitter collector anode cathode notes: 1. dimensions for all drawings are in inches (mm). 2. tolerance of .010 (.25) on all non-nominal dimensions unless otherwise speci ed.
8/8/02 page 2 of 5 ? 2002 fairchild semiconductor corporation phototransistor optocoupler H24A1 h24a2 note: 1. derate power linearly 1.67 mw/ c above 25 c 2. derate power linearly 2.5 mw/ c above 25 c absolute maximum ratings (t a = 25 c unless otherwise speci ed) parameter symbol rating unit operating temperature t opr -55 to +85 c storage temperature t stg -55 to +85 c soldering temperature (flow) t sol-f 260 for 5 sec c emitter power dissipation at 25 c ambient (1) p d 100 mw continuous forward current i f 60 ma reverse voltage v r 4v detector power dissipation 25 c ambient (2) p d 150 mw collector to emitter voltage v ceo 30 v emitter to collector voltage v eco 6v continuous forward current i c 100 ma electrical / optical characteristics (t a =25 c) individual component characteristics parameters test conditions symbol min typ max units emitter forward voltage i f = 60 ma v f 1.7 v reverse current v r = 3.0 v i r 1a reverse breakdown voltage i r = 10 a v (br)r 4v capacitance v = 0 v, f = 1 mhz c 30 pf detector breakdown voltage collector to emitter i c = 1.0 ma, i f = 0 bv ceo 30 v emitter to collector i e = 100 a, i f = 0 bv eco 7v leakage current collector to emitter v ce = 10 v, i f = 0 i ceo 5 100 na capacitance collector to emitter v ce = 5v, f = 1 mhz c ce 3.3 pf
8/8/02 page 3 of 5 ? 2002 fairchild semiconductor corporation phototransistor optocoupler H24A1 h24a2 note: 1. the current transfer ratio (i c /i f ) is the ratio of the detector collector current to the led input current with v ce at 10 volts. transfer characteristics (t a = 25 c unless otherwise speci ed.) dc characteristics test conditions symbol min typ max units coupled dc current transfer ratio (note 1) v ce = 10 v, i f = 10 ma H24A1 ctr 100 % h24a2 20 saturation voltage i c = 500 a, i f = 10 ma v ce(sat) 0.1 0.4 v ac characteristics test conditions symbol min typ max units turn-on time i c = 2ma, v ce = 10v r l = 100 ? ton 9 s turn-off time toff 4 s turn-on time i f = 10ma, v cc = 5v r l = 10k ? ton 6.5 s turn-off time toff 165 s isolation characteristics characteristic test conditions symbol min typ max units surge isolation voltage 1 minute v iso 6000 v peak steady-state isolation voltage 1 minute v iso 5300 v rms isolation resistance v i-0 = 500vdc r iso 10 11 ohm isolation capacitance v i-0 = 0, f = 1 mhz c iso 0.5 pf
8/8/02 page 4 of 5 ? 2002 fairchild semiconductor corporation phototransistor optocoupler H24A1 h24a2 100 10000 1000 100 20 10 1 .1 10 1 10 1 .01 0.03 10 1 .01 10 5 10 4 10 3 10 2 10 1 0.1 0.01 10 1 .1 .01 .001 110 0.01 0.1 1 10 100 1 1k 25 50 75 100 25 50 75 100 10k 100k 1000k 23 -55 -50 -25 0 +25 +50 +75 +100 100 i - input current - ma v f forward voltage volts r l load resistance ohms v ce collector to emitter voltage volts t a ambient temperature ct a ambient temperature c t a - ambient temperature c i ce(on) - normalized output current i f - forward current amperes t on - and t off normalized to 10k ohms i ce(on) - normalized output current i ce(on) - normalized output current i ceo - normalized dark current 10 5 10 4 10 3 10 2 10 1 0.1 i ceo - normalized leakage current 1000 normalized to: i f = 10ma v ce = 5v normalized to: r l = 10k ? i f = detector normalized to: v ce = 10 v t a = 25 c emitter normalized to: v r = 5 v t a = 25 c v cc = 5v pw = 300 s prr = 100pps 100a r l pulsed pw = 100 s prr = 100pps normalized to: i f = 10ma v ce = 5v pulsed pw = 100 s prr = 100pps normalized to: i f = 10ma v ce = 5v t a = 25 c i f = 20ma i f = 60ma t on t off i f = 20ma i f = 10ma i f = 5ma i f = 2ma i f = 10ma i f = 5ma i f = 2ma pulsed pulsed pw = 100 s prr = 100pps pulsed above 60ma pw = 100 s prr = 100pps fig. 1. output current vs. input current fig. 2. output current vs. temperature fig. 3. input characteristics fig. 4. output characteristics fig. 5. switching speed vs r l fig. 6. leakage current vs. temperature v ce = 10v
life support policy fairchild s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. 8/8/02 page 5 of 5 ? 2002 fairchild semiconductor corporation phototransistor optocoupler H24A1 h24a2
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